Cr doped III-V nitrides: potential candidates for spintronics

TL;DR

This study investigates Cr-doped III-V nitrides, revealing that certain compositions exhibit half-metallicity and metallic behavior, making them promising candidates for spintronics applications.

Contribution

The paper provides theoretical evidence that specific Cr-doped III-V nitrides are half-metallic or metallic, highlighting their potential in spintronics devices.

Findings

Al0.75Cr0.25N and Ga0.75Cr0.25N are half-metallic semiconductors.

In0.75Cr0.25N is metallic.

Cr-doped nitrides show promise for spintronics applications.

Abstract

Studies of Cr-doped III-V nitrides, dilute magnetic alloys, in the zinc-blende crystal structure are presented. The objective of the work is to investigate half-metallicity in Al(0.75)Cr(0.25)N, Ga(0.75)Cr(0.25)N and In(0.75)Cr(0.25)N for their possible application in the spin based electronic devices. The calculated spin polarized band structures, electronic properties and magnetic properties of these compounds reveal that Al0.75Cr0.25N and Ga0.75Cr0.25N are half-metallic dilute magnetic semiconductors while In0.75Cr0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr doped III-V nitrides can be used in spintronics devices.