Metal-insulator transition and electrically-driven memristive characteristics of SmNiO3 thin films

TL;DR

This paper explores the synthesis, structural properties, and electrical behavior of SmNiO3 thin films, demonstrating their insulator-metal transition and memristive properties, with potential applications in neuromorphic computing.

Contribution

It reports the successful growth of epitaxial SmNiO3 films on LaAlO3 and Si, and demonstrates electrically-driven memristive behavior in these films, advancing their potential for neuromorphic devices.

Findings

MIT observed in resistance-temperature measurements.

Epitaxial growth on LaAlO3 confirmed by X-ray diffraction.

Memristive behavior demonstrated in LaAlO3/SNO films.

Abstract

The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 {\deg}C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperature measurements in films grown on both substrates, with charge transport in-plane for LAO/SNO films and out-of-plane for Si/SNO films. Electrically-driven memristive behavior is realized in LAO/SNO films, suggesting that SNO may be relevant for neuromorphic devices.