Crossover from bias-induced to field-induced breakdowns in one-dimensional band and Mott insulators attached to electrodes
Yasuhiro Tanaka, Kenji Yonemitsu

TL;DR
This paper theoretically investigates how the breakdown of one-dimensional band and Mott insulators transitions from bias-induced to field-induced mechanisms, depending on system size and potential distribution.
Contribution
It reveals the crossover behavior of breakdown thresholds in one-dimensional insulators, emphasizing the role of scalar potential distribution and system length.
Findings
Breakdown threshold depends on system length and energy gap.
Crossover from bias-induced to field-induced breakdown occurs at a critical length.
Scalar potential distribution critically influences the breakdown mechanism.
Abstract
Nonequilibrium states induced by an applied bias voltage (V) and the corresponding current-voltage characteristics of one-dimensional models describing band and Mott insulators are investigated theoretically by using nonequilibrium Green's functions. We attach the models to metallic electrodes whose effects are incorporated into the self-energy. Modulation of the electron density and the scalar potential coming from the additional long-range interaction are calculated self-consistently within the Hartree approximation. For both models of band and Mott insulators with length L_C, the bias voltage induces a breakdown of the insulating state, whose threshold shows a crossover depending on L_C. It is determined basically by the bias for L_C smaller than the correlation length where W denotes the bandwidth and the energy gap. For systems with…
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