Two-dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

TL;DR

This study reveals a purely 2D transport-induced linear magneto-resistance in Bi2Se3 nanoribbons, persisting at room temperature, highlighting their potential for topological insulator-based magneto-electronic devices.

Contribution

It demonstrates that the linear MR in Bi2Se3 nanoribbons is due to 2D topological surface states and persists at room temperature, expanding potential applications.

Findings

Linear MR is due to 2D topological surface states.

Linear MR persists up to room temperature.

Angular dependence confirms 2D transport origin.

Abstract

We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi2Se3 nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room temperature magneto-electronic applications.