Comment on "Hole transport and photoluminescence in Mg-doped InN" [Miller et al., J. Appl. Phys., 107, 113712 (2010)]
T.A. Komissarova, S.V. Ivanov

TL;DR
This paper critically analyzes and discusses the experimental findings of Miller et al. on hole transport and photoluminescence in Mg-doped InN, providing insights and potential clarifications on their conclusions.
Contribution
It offers a detailed commentary and interpretation of prior experimental results, highlighting key aspects and potential implications for understanding Mg-doped InN.
Findings
Clarifies the experimental results of Miller et al.
Provides insights into hole transport mechanisms.
Discusses implications for photoluminescence in Mg-doped InN.
Abstract
Analysis and discussion of the experimental results and conclusions reported in "Hole transport and photoluminescence in Mg-doped InN" [Miller et al., J. Appl. Phys., 107, 113712 (2010)] will be provided.
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Ga2O3 and related materials · Acoustic Wave Resonator Technologies
