Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics

TL;DR

This paper demonstrates large-scale graphene transferred onto ferroelectric PZT substrates enabling ultra-low voltage, high doping, and hysteresis-based switching for advanced low-voltage electronic devices.

Contribution

It introduces a new method for transferring large-scale CVD graphene onto ferroelectric substrates, enabling low-voltage operation and non-volatile switching in graphene transistors.

Findings

Graphene transistors operate within ±1 V with high doping levels.

Switching behavior shows pronounced resistance hysteresis.

Devices are suitable for ultra-fast non-volatile electronics.

Abstract

Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly hampered by a very low sample yield of the exfoliation and related transferring methods. Here, we report a new route in exploring new graphene physics and functionalities by transferring large-scale chemical vapor deposition single-layer and bilayer graphene to functional substrates. Using ferroelectric Pb(Zr$_{0.3}$Ti$_{0.7}$)O$_{3}$ (PZT), we demonstrate ultra-low voltage operation of graphene field effect transistors within $\pm1$ V with maximum doping exceeding $10^{13}\,\mathrm{cm^{-2}}$ and on-off ratios larger than 10 times. After polarizing PZT, switching of graphene field effect transistors are characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics.