Quantum Oscillations in a Topological Insulator Bi$_2$Te$_2$Se with Large Bulk Resistivity (6 $\Omega$cm)
Jun Xiong, A. C. Petersen, Dongxia Qu, R. J. Cava, N. P. Ong

TL;DR
This paper reports the observation of quantum oscillations in a topological insulator with high bulk resistivity, revealing surface Dirac states and evidence of fractional-filling states, advancing understanding of topological surface conduction.
Contribution
It provides experimental evidence of quantum oscillations and fractional states in Bi$_2$Te$_2$Se with high bulk resistivity, highlighting surface state properties.
Findings
Observation of Shubnikov-de Haas oscillations in Bi$_2$Te$_2$Se
Identification of Dirac surface states with a half-integer shift
Evidence of fractional-filling states at high magnetic fields
Abstract
We report the observation of prominent Shubnikov-de Haas oscillations in a Topological Insulator, BiTeSe, with large bulk resistivity (6 cm at 4 K). By fitting the SdH oscillations, we infer a large metallicity parameter = 41, with a surface mobility ( 2,800 cm/Vs) much larger than the bulk mobility ( 50 cm/Vs). The plot of the index fields vs. filling factor shows a -shift, consistent with massless, Dirac states. Evidence for fractional-filling states is seen in an 11-T field.
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