Zitterbewegung (trembling motion) of electrons in semiconductors: a Review
Wlodek Zawadzki, Tomasz M. Rusin

TL;DR
This review summarizes recent advances in understanding Zitterbewegung, the trembling motion of electrons, in semiconductors and related systems, highlighting experimental, theoretical, and simulation studies across various materials.
Contribution
It provides a comprehensive overview of Zitterbewegung phenomena in semiconductors, including recent experimental observations, theoretical models, and simulations, covering graphene, nanotubes, and photonic structures.
Findings
Zitterbewegung observed in graphene and nanotubes.
External magnetic fields influence ZB behavior.
Simulations replicate ZB-like phenomena in various systems.
Abstract
We review recent research on Zitterbewegung (ZB, trembling motion) of electrons in semiconductors. A brief history of the subject is presented, the trembling motion in semirelativistic and spin systems is considered and its main features are emphasized. Zitterbewegung of charge carriers in monolayer and bilayer graphene as well as in carbon nanotubes is elaborated in some detail. We describe effects of an external magnetic field on ZB using monolayer graphene as an example. Nature of electron ZB in crystalline solids is explained. We also review various simulations of the trembling motion in a vacuum and in semiconductors, and mention ZB-like wave phenomena in sonic and photonic periodic structures. An attempt is made to quote all the relevant literature on the subject.
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