Nature of polarization fatigue in BiFeO3
Seung-Hyub Baek, Chad M. Folkman, Jae-Wan Park, Sanghan Lee,, Chung-Wung Bark, Thomas Tybell, Chang-Beom Eom

TL;DR
This paper investigates how polarization fatigue in BiFeO3 varies with different switching paths, providing insights into the intrinsic fatigue mechanisms in low-symmetry multiferroic materials.
Contribution
It presents a detailed study of polarization fatigue in BiFeO3 for different switching paths and proposes a fatigue model to enhance understanding of fatigue in low-symmetry materials.
Findings
Polarization fatigue depends on the switching path in BiFeO3.
A fatigue model is proposed to explain the intrinsic fatigue behavior.
Understanding fatigue mechanisms can improve device reliability.
Abstract
As a room-temperature multiferroic, BiFeO3 has been intensively investigated for both magnetoelectric devices and non-volatile ferroelectric memory applications. Both magnetoelectric and ferroelectric memory devices have the same control knob: polarization switching by an applied electric field. Due to the rhombohedral symmetry of BiFeO3, there are four ferroelastic variances and three different polarization switching events: (1) 71{\deg} switching from r1- to r3+, (2) 109{\deg} switching from r1- to r2+ (or r4+), and (3) 180o switching from r1- to r1+ (the superscript + and - stand for up and down polarization, respectively). Each switching path is coupled to a different reorientation of the BiFeO3 unit cell, and hence different coupling to the magnetic order as well as different magnitudes of switchable polarization. A degradation of the ferroelectric properties of BiFeO3 will result…
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Taxonomy
TopicsMultiferroics and related materials
