Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

TL;DR

This paper introduces a novel fabrication method for GaAs/AlGaAs core-shell nanowires that exhibit stable, quasi-one-dimensional transport properties, with conductance behavior following power laws indicative of 1D systems.

Contribution

It presents an original fabrication approach for single GaAs/AlGaAs nanowires with reproducible transport characteristics and demonstrates their quasi-1D conductance behavior.

Findings

Conductance shows non-ohmic behavior with temperature and voltage dependence.

Transport properties follow power laws consistent with quasi-1D systems.

Fabrication method yields robust and reproducible nanowire devices.

Abstract

We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two probe set-up using the highly doped growth substrate and a top diffused contact. The measured conductance shows a non-ohmic behavior with temperature and voltage-bias dependences following power laws, as expected for a quasi-1D system.