Resonant tunneling controlled by laser and constant electric fields

TL;DR

This paper introduces a scattering matrix approach to numerically analyze electron resonant tunneling in semiconductor heterostructures under combined constant and oscillating electric fields, revealing field effects on tunneling behavior.

Contribution

It presents a stable numerical algorithm for calculating resonant tunneling in complex electric field configurations, advancing the modeling of electron transport in heterostructures.

Findings

Resonant tunneling is significantly affected by the strength of external electric fields.

The developed method allows for accurate simulations of electron behavior under combined static and dynamic fields.

Field configurations influence tunneling probabilities and resonance conditions.

Abstract

We develop the concept of scattering matrix and we use it to perform stable numerical calculations of resonant tunneling of electrons through a multiple potential barrier in a semiconductor heterostructure. Electrons move in two external nonperturbative electric fields: constant and oscillating in time. We apply our algorithm for different strengths and spatial configurations of the fields.