Magnetic field-induced exchange effects between Mn ions and free carriers in ZnSe quantum well through the intermediate nonmagnetic barrier studied by photoluminescence
D. M. Zayachuk, T. Slobodskyy, G. V. Astakhov, A. Slobodskyy, C., Gould, G. Schmidt, W. Ossau, L. W. Molenkamp

TL;DR
This study investigates how an intermediate nonmagnetic barrier influences magnetic field-induced exchange effects and photoluminescence properties in a layered ZnSe quantum well structure with semimagnetic barriers at low temperature.
Contribution
It provides new insights into the role of the intermediate barrier in modifying exchange interactions and luminescence behavior in Mn-doped ZnSe quantum well structures.
Findings
The intermediate barrier affects the shift rates of PL bands under magnetic fields.
Deformation caused by the barrier influences Mn complex formation.
The barrier alters the giant Zeeman splitting and exciton polarization.
Abstract
Photoluminescence (PL) of the 50 nm / nm / 2.5 nm / 30 nm structures is investigated as a function of magnetic field () and thickness () of intermediate nonmagnetic barrier between the semimagnetic barrier and quantum well at the temperature 1.2 K. The rate of the shift of different PL bands of the structures under study is estimated in low and high magnetic fields. The causes of the shift rate increase under pass from low to high magnetic fields are interpreted. The peculiarities of the effect of the intermediate barrier on the luminescence properties of the structures are presented. It is shown that deformation of adjacent layers by the barrier plays a crucial role in the formation of these properties, especially in forming the…
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