Transmission Electron Microscopy Studies on RF Sputtered Copper Ferrite Thin Films

TL;DR

This study investigates the microstructural properties of rf sputtered copper ferrite thin films using TEM, revealing defect concentrations, grain growth behavior, and crystallinity differences based on deposition and annealing conditions.

Contribution

It provides detailed TEM analysis of copper ferrite thin films, highlighting the effects of sputtering power and annealing on defect density and grain structure.

Findings

Higher defect concentration in 50W as deposited films.

Unusual grain growth up to 180nm after annealing and slow cooling.

Presence of Kikuchi patterns indicating crystallinity.

Abstract

Copper ferrite thin films were rf sputtered at a power of 50W. The as deposited films were annealed in air at 800{\deg}C and slow cooled. The transmission electron microscope (TEM) studies were carried out on as deposited as well as on slow cooled film. Significantly larger defect concentration, including stacking faults, was observed in 50W as deposited films than the films deposited at a higher rf power of 200W. The film annealed at 800{\deg}C and then slow cooled showed an unusual grain growth upto 180nm for a film thickness of ~240nm. These grains showed Kikuchi pattern.