Single-dopant resonance in a single-electron transistor

TL;DR

This paper demonstrates the coupling of a single arsenic donor atom to a silicon nanowire single-electron transistor, revealing both capacitive and tunnel interactions that significantly enhance conductance, with results supported by theoretical modeling.

Contribution

It reports the first experimental observation of single-dopant resonance coupling in a silicon SET, combining experimental data with theoretical analysis.

Findings

Achieved capacitive and tunnel coupling between a single As donor and a SET.

Observed up to tenfold increase in conductance due to tunnel coupling.

Experimental results align with developed rate equations theory.

Abstract

Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental results are well explained by the rate equations theory developed in parallel with the experiment.