Electrical Detection of Coherent Nuclear Spin Oscillations in Phosphorus-Doped Silicon Using Pulsed ENDOR

TL;DR

This paper demonstrates electrical detection of coherent nuclear spin oscillations in phosphorus-doped silicon using pulsed ENDOR, enabling potential electrical readout of nuclear spin qubits without requiring electron spin polarization.

Contribution

It introduces a method for electrically detecting nuclear spin transitions and coherent oscillations in silicon, advancing quantum information processing capabilities.

Findings

Electrical detection of $^{31}$P nuclear spins achieved

Coherent nuclear spin oscillations observed electrically

Potential for electrical readout of nuclear spin qubits

Abstract

We demonstrate the electrical detection of pulsed X-band Electron Nuclear Double Resonance (ENDOR) in phosphorus-doped silicon at 5\,K. A pulse sequence analogous to Davies ENDOR in conventional electron spin resonance is used to measure the nuclear spin transition frequencies of the $^{31}$P nuclear spins, where the $^{31}$P electron spins are detected electrically via spin-dependent transitions through Si/SiO$_2$ interface states, thus not relying on a polarization of the electron spin system. In addition, the electrical detection of coherent nuclear spin oscillations is shown, demonstrating the feasibility to electrically read out the spin states of possible nuclear spin qubits.