Memristive Systems Analysis of 3-Terminal Devices

TL;DR

This paper extends the memristive systems framework to include 3-terminal devices, demonstrating their relevance to various memory and electronic components with memory effects.

Contribution

It introduces a generalized model for 3-terminal devices exhibiting memristive behavior, expanding the original 2-terminal framework to encompass non-passive systems.

Findings

The extended model applies to Widrow-Hoff memistor.

It explains floating gate memory cell behavior.

It models nano-ionic FETs with memory effects.

Abstract

Memristive systems were proposed in 1976 by Leon Chua and Sung Mo Kang as a model for 2-terminal passive nonlinear dynamical systems which exhibit memory effects. Such systems were originally shown to be relevant to the modeling of action potentials in neurons in regards to the Hodgkin-Huxley model and, more recently, to the modeling of thin film materials such as TiO2-x proposed for non-volatile resistive memory. However, over the past 50 years a variety of 3-terminal non-passive dynamical devices have also been shown to exhibit memory effects similar to that predicted by the memristive system model. This article extends the original memristive systems framework to incorporate 3-terminal, non-passive devices and explains the applicability of such dynamic systems models to 1) the Widrow-Hoff memistor, 2) floating gate memory cells, and 3) nano-ionic FETs. Keywords-memristive systems, memistor, transconductance, synaptic transistor, non-linear dynamic systems