Tuning of Graphene Properties via Controlled Exposure to Electron Beams

TL;DR

This paper demonstrates that controlled electron beam irradiation can tune the electrical properties of single-layer graphene, enabling defect engineering and potential circuit writing, with bilayer graphene showing less susceptibility.

Contribution

It introduces a method to modify graphene's electrical properties through electron beam irradiation, providing a new approach for defect engineering and device fabrication.

Findings

Irradiation dose controls carrier mobility and resistance in single-layer graphene.

Bilayer graphene is less affected by electron beam irradiation.

Changes in Raman D peak correlate with property modifications.

Abstract

Controlled modification of graphene properties is essential for its proposed electronic applications. Here we describe a possibility of tuning electrical properties of graphene via electron beam irradiation. We show that by controlling the irradiation dose one can change the carrier mobility and increase the resistance at the minimum conduction point in the single layer graphene. The bilayer graphene is less susceptible to the electron beam irradiation. The modification of graphene properties via irradiation can be monitored and quantified by the changes in the disorder D peak in Raman spectrum of graphene. The obtained results may lead to a new method of defect engineering of graphene physical properties, and to the procedure of "writing" graphene circuits via e-beam irradiation. The results also have implications for fabrication of graphene nanodevices, which involve scanning electron microscopy and electron beam lithography.