Fully electrically read-write device out of a ferromagnetic semiconductor

TL;DR

This paper demonstrates a novel electrically controlled read-write device using ferromagnetic semiconductor (Ga,Mn)As, enabling potential new memory and logic applications through current-induced switching and TAMR read-out.

Contribution

It introduces the first ferromagnetic semiconductor-based read-write device utilizing current-induced switching and TAMR for data storage.

Findings

Successful magnetic state switching via current in (Ga,Mn)As

Read-out achieved through tunneling anisotropic magneto resistance

Device demonstrates potential for electrically programmable memory

Abstract

We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.