Tunnel magnetoresistance of Fe3O4/MgO/Fe nanostructures
S. G. Chigarev, E. M. Epshtein, I. V. Malikov, G. M. Mikhailov, P. E., Zilberman
TL;DR
This paper investigates the magnetic and transport properties of Fe3O4/MgO/Fe tunnel junctions, analyzing their magnetic energy, switching behavior, and tunnel magnetoresistance under different magnetic fields.
Contribution
It provides a detailed analysis of the magnetic energy and magnetoresistance in Fe3O4/MgO/Fe junctions, highlighting differences from unidirectional anisotropy junctions.
Findings
Lower magnetic field needed for switching compared to unidirectional anisotropy junctions
Magnetoresistance varies with external magnetic field
Magnetic energy depends on the angle between magnetization vectors
Abstract
A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.
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Taxonomy
TopicsMagnetic properties of thin films · Multiferroics and related materials · ZnO doping and properties