The exchange bias phenomenon in uncompensated interfaces: Theory and Monte Carlo simulations

TL;DR

This study uses Monte Carlo simulations to analyze the exchange bias phenomenon at uncompensated interfaces in bilayer ferromagnetic/antiferromagnetic systems, revealing how interfacial interactions and thermal fluctuations influence the bias field.

Contribution

It introduces a combined Monte Carlo and simplified model approach to understand the microscopic mechanisms of exchange bias in different lattice structures.

Findings

Bias field depends on AFM anisotropy to exchange ratio.

Interfacial strength interactions significantly influence the bias.

Thermal fluctuations affect the stability of the bias field.

Abstract

We performed Monte Carlo simulations in a bilayer system composed by two thin films, one ferromagnetic (FM) and the other antiferromagnetic (AFM). Two lattice structures for the films were considered: simple cubic (sc) and a body center cubic (bcc). In both lattices structures we imposed an uncompensated interfacial spin structure, in particular we emulated a FeF2-FM system in the case of the (bcc) lattice. Our analysis focused on the incidence of the interfacial strength interactions between the films J_eb and the effect of thermal fluctuations on the bias field H_EB. We first performed Monte Carlo simulations on a microscopic model based on classical Heisenberg spin variables. To analyze the simulation results we also introduced a simplified model that assumes coherent rotation of spins located on the same layer parallel to the interface. We found that, depending on the AFM film anisotropy to exchange ratio, the bias field is either controlled by the intrinsic pinning of a domain wall parallel to the interface or by the stability of the first AFM layer (quasi domain wall) near the interface.