Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing

TL;DR

This paper reports the successful epitaxial growth of full-Heusler Co2FeGe alloy thin films via rapid thermal annealing-induced germanidation of multilayers on SOI substrates, confirmed by XRD and TEM analyses.

Contribution

It demonstrates a novel method for epitaxial growth of Co2FeGe films using rapid thermal annealing of multilayers on SOI, with detailed structural characterization.

Findings

Epitaxial Co2FeGe films were grown with [001] orientation.

The films exhibited high L21 order and epitaxial quality.

No interfacial layer formed between the film and substrate.

Abstract

The authors demonstrated that a full-Heusler Co2FeGe (CFG) alloy thin film was epitaxially grown by rapid-thermal-annealing-induced germanidation of an Fe/Co/pseudo-Ge(001)-on-insulator (GOI) multilayer formed on a Si-on-insulator (SOI) substrate. X-ray diffraction (XRD) measurements with the out-of-plane and in-plane configurations revealed that the CFG film was epitaxially grown along the [001] direction with the in-plane epitaxial relation of CFG[100]||GOI[100], although the film slightly contained a texture component. The strong (111) and (200) superlattice diffraction intensities indicated that the CFG film had a high degree of order for the L21 structure. Cross-sectional high-resolution transmission electron microscopy images of the film implied that the film had the dominant epitaxial and slight texture components, which was consistent with the XRD measurements. The epitaxial component was grown directly on the BOX layer of the SOI substrate without the formation of any interfacial layer.