Influence of Mutual Drag of Light and Heavy Holes on Magnetoresistivity and Hall-effect of p-Silicon and p-Germanium

TL;DR

This paper investigates how the mutual drag between light and heavy holes affects the magnetoresistivity and Hall-effect in p-type silicon and germanium, revealing significant and complex influences.

Contribution

It introduces a detailed analysis of the mutual drag effect between light and heavy holes and its impact on magnetotransport properties in semiconductors.

Findings

Mutual drag significantly influences magnetoresistivity.

Interaction affects Hall-effect measurements.

The effect is non-trivial and substantial.

Abstract

Hall-effect and magnetoresistivity of holes in silicon and germanium are considered with due regard for mutual drag of light and heavy band carriers. Search of contribution of this drag shows that this interaction has a sufficient and non-trivial influence on both effects.