A simple trapped-ion architecture for high-fidelity Toffoli gates

TL;DR

This paper proposes a straightforward trapped-ion setup for implementing high-fidelity Toffoli gates, demonstrating robustness and detailed characterization under realistic experimental conditions.

Contribution

It introduces a simple, robust architecture for Toffoli gates in trapped ions, with a comprehensive analysis of its performance and noise resilience.

Findings

Single laser-induced operation feasible for Toffoli gate

High robustness against dephasing, heating, and parameter fluctuations

Complete characterization via three-qubit quantum process tomography

Abstract

We discuss a simple architecture for a quantum Toffoli gate implemented using three trapped ions. The gate, which in principle can be implemented with a single laser-induced operation, is effective under rather general conditions and is strikingly robust (within any experimentally realistic range of values) against dephasing, heating and random fluctuations of the Hamiltonian parameters. We provide a full characterization of the unitary and noise-affected gate using three-qubit quantum process tomography.