Ionisation Models for Nano-Scale Simulation
H. Seo (1), M. G. Pia (2), P. Saracco (2), C. H. Kim (1) ((1), Hanyang University, (2) INFN, Sezione di Genova)

TL;DR
This paper develops and implements two theoretical models for electron ionization cross sections to enhance nano-scale simulations in Geant4, validated against extensive experimental data across many elements.
Contribution
It introduces and compares two new theory-driven ionization models, Binary-Encounter-Bethe and Deutsch-Märk, for improved nano-scale simulation accuracy.
Findings
Models show good agreement with experimental data
Extended simulation capabilities in Geant4
Validated across over 50 elements
Abstract
Two theory-driven models of electron ionization cross sections, the Binary-Encounter-Bethe model and the Deutsch-M\"ark model, have been design and implemented; they are intended to extend the simulation capabilities of the Geant4 toolkit. The resulting values, along with the cross sections included in the EEDL data library, have been compared to an extensive set of experimental data, covering more than 50 elements over the whole periodic table.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
