Measuring sheet resistance of CIGS solar cell's window layer by spatially resolved electroluminescence imaging

TL;DR

This paper introduces a spatially resolved electroluminescence imaging technique to measure local sheet resistance in CIGS solar cell window layers, combining experimental imaging with analytical modeling for precise characterization.

Contribution

The study develops a novel method integrating EL imaging and analytical modeling to directly measure the sheet resistance of the CIGS cell's window layer on completed devices.

Findings

Successful correlation between EL intensity and sheet resistance.

Validated method for in-line process inspection.

Enhanced understanding of potential distribution in CIGS cells.

Abstract

A spatially resolved electroluminescence (EL) imaging experiment is developed to measure the local sheet resistance of the window layer, directly on the completed CIGS cell. Our method can be applied to the EL imaging studies that are made in fundamental studies as well as in in-line process inspection (1-3). The EL experiment consists in using solar cell as a light emitting device : a voltage is applied to the cell and its luminescence is detected. We develop an analytical and quantitative model to simulate the behavior of CIGS solar cells based on the spread sheet resistance effect in the window layer. We determine the repartition of the electric potential on the ZnO, for given cell's characteristics such as sheet resistance and contact geometries. Knowing the repartition of the potential, the EL intensity is estimated and the experimental EL signal is fitted, which allows the determination of the window layer sheet resistance.