A U-shaped bilayer graphene channel transistor with a very high Ion/Ioff ratio

TL;DR

This paper introduces a novel U-shaped bilayer graphene transistor with a gallium FIB fabrication process, achieving an exceptionally high Ion/Ioff ratio exceeding 10^5, demonstrating significant potential for high-performance electronic devices.

Contribution

The paper presents a new U-shaped bilayer graphene transistor architecture fabricated with gallium FIB, achieving an Ion/Ioff ratio over 10^5, which is higher than previous designs.

Findings

Ion/Ioff ratio exceeded 10^5

U-shaped geometry enhances performance

Gallium FIB enables precise fabrication

Abstract

A novel graphene transistor architecture is reported. The transistor has a U-shape geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 10^5.