Manipulation and decoherence of acceptor charge qubit in silicon

TL;DR

This paper investigates the manipulation and decoherence of acceptor charge qubits in silicon, demonstrating electric field control of energy levels and observing decoherence times, highlighting the potential for quantum computing applications.

Contribution

It presents experimental evidence of electric field control over acceptor energy levels and decoherence times in silicon, advancing acceptor-based charge qubits for quantum computing.

Findings

Electric fields induce transitions between acceptor energy levels.

Longer decoherence times observed in low boron concentration silicon.

Scalable acceptor-based system shows promise for quantum computing.

Abstract

Dielectric constant and absorption measurements on boron doped silicon samples show that transitions between the acceptor energy levels can be induced by an applied resonant ac electric field and the Stark tuning of level spacing with an external DC electric field. The relatively longer decoherence times were observed by the electric echo measurement in a low boron dopant concentration Si sample. The scalable acceptor-based system is a promising candidate of the charge qubit for quantum computing.