Weak antilocalization effect of high-mobility two-dimensional electron gas in inversion layer on p-type HgCdTe

TL;DR

This study investigates the magnetoconductance of a high-mobility 2DEG on p-type HgCdTe, revealing quantum Hall effects and weak antilocalization, and analyzes phase coherence and spin-splitting phenomena.

Contribution

It provides new insights into weak antilocalization effects and phase coherence in high-mobility 2DEGs on HgCdTe, with experimental analysis based on Golub's model.

Findings

Observation of quantum Hall effect at strong magnetic fields.

Detection of weak antilocalization in the ballistic regime.

Temperature dependence of dephasing rate aligns with Nyquist mechanism.

Abstract

Magnetoconductance of a gated two-dimensional electron gas (2DEG) in the inversion layer on p-type HgCdTe crystal is investigated. At strong magnetic fields, characteristic features such as quantum Hall effect of a 2DEG with single subband occupation are observed. At weak magnetic fields, weak antilocalization effect in ballistic regime is observed. Phase coherence time and zero-field spin-splitting are extracted according to Golub's model. The temperature dependence of dephasing rate is consistent with Nyquist mechanism including both singlet and triplet channel interactions.