Weak field magnetoresistance of narrow-gap semiconductor InSb

TL;DR

This study investigates the weak antilocalization effect in InSb films, revealing their quasi-two-dimensional nature and the influence of roughness and Zeeman effects on magnetoresistance anisotropy.

Contribution

It provides a systematic analysis of the anisotropic weak antilocalization in InSb films, highlighting the roles of roughness and in-plane magnetic fields.

Findings

InSb films exhibit quasi-two-dimensional behavior.

Roughness significantly affects magnetoresistance anisotropy.

In-plane magnetic fields suppress weak antilocalization.

Abstract

The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated. It is found that the InSb film has quasi-two-dimensional feature and the Nyquist mechanism dominates decoherence. The two dimensionality is also verified further and the influence of roughness effect and Zeeman effect on weak antilocalization effect is studied by systematically investigating the anisotropy of weak field magnetoresistance with respect to magnetic field. It is also found that the existence of in-plane field can effectively suppress the weak antilocalization effect of InSb film and the roughness effect plays an important role in the anisotropy.