Design, development and validation of electron ionisation models for nano-scale simulation
H. Seo (1), M. G. Pia (2), P. Saracco (2), C. H. Kim (1) ((1) Hanyang, University, (2) INFN Sezione di Genova)

TL;DR
This paper presents the design, implementation, and validation of two electron ionization models for nano-scale simulations within the Geant4 toolkit, comparing their performance against experimental data across many elements.
Contribution
It introduces two new theory-driven electron ionization models, extending Geant4's simulation capabilities and validated against extensive experimental data.
Findings
Models show good agreement with experimental data
Extended simulation accuracy across over 50 elements
Improved capabilities for nano-scale electron ionization simulation
Abstract
Two theory-driven models of electron ionization cross sections, the Binary-Encounter-Bethe model and the Deutsch-M\"ark model, have been design and implemented; they are intended to extend the simulation capabilities of the Geant4 toolkit. The resulting values, along with the cross sections included in the EEDL data library, have been compared to an extensive set of experimental data, covering more than 50 elements over the whole periodic table.
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Taxonomy
TopicsElectron and X-Ray Spectroscopy Techniques · Atomic and Molecular Physics · Semiconductor materials and devices
