Magnetoresistance in a High Mobility Two-Dimensional Electron Gas

TL;DR

This paper reports on the strong magnetoresistance observed in high mobility 2DEGs in GaAs/AlGaAs quantum wells, highlighting its dependence on electron density and temperature, and modeling it with electron-electron interaction corrections.

Contribution

It introduces a density-dependent factor to fit the magnetoresistance data to electron-electron interaction models in high mobility 2DEGs.

Findings

Magnetoresistance exceeds 300% at low electron densities.

Magnetoresistance diminishes with increasing temperature.

A density-dependent factor improves the fit to electron-electron interaction models.

Abstract

In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes for increasing the temperature. An additional density dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.