Spontaneous cross-section field in impurity graphene
M.B. Belonenko, N.G. Lebedev, A.V. Pak, N.N. Yanyushkina
TL;DR
This paper investigates the spontaneous electric field phenomenon in doped graphene under external electric fields, revealing a perpendicular spontaneous field linked to nonequilibrium electron behavior and parameter influences.
Contribution
It introduces the concept of spontaneous cross-section electric fields in impurity graphene and analyzes how various parameters affect this phenomenon.
Findings
Spontaneous electric field occurs perpendicular to the applied field.
The effect is connected to the nonequilibrium electron subsystem.
Parameters influence the characteristics of the spontaneous field.
Abstract
It was found that the spontaneous electric field can occur in doped graphene in an external dc electric field. The direction of the spontaneous field is perpendicular to the applied field. This effect can be connected with the nonequilibrium electron subsystem of graphene. It was also shown up the influence of problem parameters on the characteristics of the spontaneous field.
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Taxonomy
TopicsGraphene research and applications · Carbon Nanotubes in Composites · Silicon Nanostructures and Photoluminescence