Full Band Structure Calculation of Two-photon Indirect Absorption in Bulk Silicon

TL;DR

This paper presents a comprehensive band structure calculation of two-photon indirect absorption in silicon, highlighting phonon-assisted processes and aligning well with experimental data.

Contribution

It introduces a full band structure computational approach using pseudopotentials and phonon models to analyze two-photon absorption in silicon.

Findings

Transverse phonon-assisted processes dominate absorption

Results agree with recent experimental data

Provides detailed insight into phonon contributions

Abstract

Degenerate two-photon indirect absorption in silicon is an important limiting effect on the use of silicon structures for all-optical information processing at telecommunication wavelengths. We perform a full band structure calculation to investigate two-photon indirect absorption in bulk silicon, using a pseudopotential description of the energy bands and an adiabatic bond charge model to describe phonon dispersion and polarization. Our results agree well with some recent experimental results. The transverse acoustic/optical phonon-assisted processes dominate.