On the possibility of obtaining MOSFET-like performance and sub-60 mV/decade swing in 1D broken-gap tunnel transistors

TL;DR

This paper investigates a 1D broken-gap TFET design using quantum transport simulations, demonstrating sub-60 mV/decade swing at room temperature and performance comparable or superior to MOSFETs, promising for low-power applications.

Contribution

It introduces a novel 1D broken-gap TFET design with detailed simulation analysis showing potential for high performance and ultra-low subthreshold swing at room temperature.

Findings

Achieves less than 60mV/decade subthreshold swing at room temperature.

Demonstrates performance comparable or superior to MOSFETs at low VDD.

Shows the advantages of 1D geometry in TFET operation.

Abstract

Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challenge for TFETs so far has been achieving high drive currents, which is a prerequisite for high-performance operation. In this paper we explore the performance potential of a 1D TFET with a broken-gap heterojunction source injector using dissipative quantum transport simulations based on the nonequilibrium Green's function formalism, and the carbon nanotube bandstructure as the model 1D material system. We provide detailed insights into broken-gap TFET (BG-TFET) operation, and show that it can indeed produce less than 60mV/decade subthreshold swing at room temperature even in the presence of electron-phonon scattering. The 1D geometry is recognized to be uniquely favorable due to its superior electrostatic control, reduced carrier thermalization rate, and beneficial quantum confinement effects that reduce the off-state leakage below the thermionic limit. Because of higher source injection compared to staggered-gap and homojunction geometries, BG-TFET delivers superior performance that is comparable to MOSFET's. BG-TFET even exceeds the MOSFET performance at lower supply voltages (VDD), showing promise for low-power/high-performance applications.