Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots

TL;DR

This paper investigates how electric fields influence the g tensor of holes in In0.5Ga0.5As/GaAs quantum dots, revealing potential for high-frequency spin control and subharmonic resonances.

Contribution

It provides a theoretical analysis of electric-field effects on the hole g tensor, highlighting mechanisms for electric control of spin in quantum dots.

Findings

Electric field modulates the hole g tensor significantly.

High-frequency g tensor modulation resonance is possible.

Subharmonic resonances occur due to quadratic dependence.

Abstract

The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum dots is calculated using multiband real-space envelope-function theory. The dependence of the Lande' g tensor on electric fields should permit high-frequency g tensor modulation resonance, as well as direct, nonresonant electric-field control of the hole spin. Subharmonic resonances have also been found in g tensor modulation resonance of the holes, due to the strong quadratic dependence of components of the hole g tensor on the electric field.