Influence of Mutual Drag of Light and Heavy Holes on conductivity of p-Silicon and p-Germanium

TL;DR

This paper investigates how mutual drag between light and heavy holes affects the electrical conductivity of p-Silicon and p-Germanium, revealing significant impacts on drift velocity and nonmonotonous temperature and density dependencies.

Contribution

It introduces a two-band model accounting for mutual hole drag, highlighting its influence on conductivity in p-type semiconductors at various temperatures.

Findings

Mutual drag reduces drift velocity of light holes.

Conductivity shows nonmonotonous dependence on temperature.

Drag effect significantly diminishes overall conductivity.

Abstract

Conductivity of p-Si and p-Ge is considered for two band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes drift velocity of light holes and, as result, the total conductivity of crystal. Considered here drag-effect appears as well in the form of nonmonotonous dependences of conductivity on temperature and carrier density.