Novel growth mechanism of epitaxial graphene on metals
Andrew Zangwill, Dimitri D. Vvedensky

TL;DR
This paper introduces a rate theory for epitaxial graphene growth on metals, highlighting the role of five-atom clusters in island formation and providing insights into stable precursors for large-scale graphene production.
Contribution
It presents a novel atomistic growth model based on cluster addition, supported by experimental data, advancing understanding of graphene epitaxy on metal surfaces.
Findings
Graphene islands grow mainly by five-atom cluster addition.
The model's predictions match experimental adatom density data.
The smallest stable precursor is an immobile six-cluster island.
Abstract
Graphene, a hexagonal sheet of -bonded carbon atoms, has extraordinary properties which hold immense promise for future nanoelectronic applications. Unfortunately, the popular preparation methods of micromechanical cleavage and chemical exfoliation of graphite do not easily scale up for application purposes. Epitaxial graphene provides an attractive alternative, though there are many challenges, not least of which is the absence of an understanding of the complex atomistic assembly kinetics of graphene. Here, we present a simple rate theory of epitaxial graphene growth on close-packed metal surfaces. Based on recent low-energy electron-diffraction microscopy experiments (LEEM) \cite{loginova09}, our theory supposes that graphene islands grow predominantly by the addition of five-atom clusters, rather than solely by the capture of diffusing carbon atoms. With suitably chosen…
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