A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells

TL;DR

This paper introduces a simple, scalable graphene patterning technique compatible with various substrates and demonstrates its application in fabricating efficient CdSe nanobelt/graphene Schottky junction solar cells with promising performance.

Contribution

A novel graphene patterning method that is high-resolution, scalable, and compatible with existing technologies, applied to improve solar cell fabrication.

Findings

High open-circuit voltage (~0.51 V) achieved in solar cells

Energy conversion efficiency of approximately 1.25%

Effective formation of Schottky contact with CdSe nanobelts

Abstract

We develop a simple and scalable graphene patterning method using electron-beam or ultraviolet lithography followed by a lift-off process. This method, with the merits of: high pattern resolution and high alignment accuracy, free from additional etching or harsh process, universal to arbitrary substrates, compatible to Si microelectronic technology, can be easily applied to diverse graphene-based devices, especially in array-based applications, where large-scale graphene patterns are desired. We have applied this method to fabricate CdSe nanobelt (NB)/graphene Schottky junction solar cells, which have potential application in integrated nano-optoelectronic systems. Typical as-fabricated solar cell shows excellent photovoltaic behavior with an open-circuit voltage of ~ 0.51 V, a short-circuit current density of ~ 5.75 mA/cm2, and an energy conversion efficiency of ~1.25%. We attribute the high performance of the cell to the as-patterned high-performance graphene, which can form an ideal Schottky contact with CdSe NB. Our results suggest both the developed graphene patterning method and the as-fabricated CdSe nanobelt (NB)/graphene Schottky junction solar cells have reachable application prospect.