Possibility of exchange switching ferromagnet - antiferromagnet junctions

TL;DR

This paper explores the potential for switching the magnetic state in ferromagnet-antiferromagnet junctions using spin-polarized currents and magnetic fields, aiming to reduce the required current density for switching.

Contribution

It demonstrates the possibility of significantly lowering the threshold current density for magnetization switching through magnetic field application in FM-AFM junctions.

Findings

Magnetic field can reduce the switching current density by orders of magnitude.

Spin-polarized current from FM can induce magnetization switching in AFM.

Controlled magnetic field enables efficient magnetization control in junctions.

Abstract

Current flowing is studied in magnetic junctions consisting of a ferromagnetic metal (FM), antiferromagnetic conductor (AFM) and a nonmagnetic metal closing the electric circuit. The FM layer with high anisotropy and pinned spins of the magnetic atoms in the lattice acts as a spin injector relative to the AFM layer. To obtain resulting magnetization in the AFM layer, magnetic field is applied, which may be varied to control the magnetization. The spin-polarized current from the FM layer creates a torque and makes it possible to switch the magnetization. A possibility is shown to lower the threshold current density by the orders of magnitude by means of the magnetic field.