Galvanomagnetic effects in graphene

TL;DR

This paper theoretically investigates galvanomagnetic effects in graphene, revealing the absence of Hall-effect in neutral graphene and the vanishing of magnetoresistivity in gated, monopolar graphene, with implications for understanding charge transport.

Contribution

It provides a theoretical analysis of galvanomagnetic effects in graphene, highlighting differences between neutral and gated states and challenging existing relaxation time approximation results.

Findings

Hall-effect is absent in neutral graphene.

Magnetoresistivity vanishes in gated, monopolar graphene.

Hall-constant is independent of relaxation characteristics in this model.

Abstract

Galvanomagnetic effects in graphene Magnetoresistivity and Hole-effect were theoretically investigated for neutral and gated graphene. It is shown that in neutral graphene Hall-effect is totally absent. In gated, exactly monopolar graphene effect of magnetoresistivity vanishes; here Hall-constant does not involve any relaxation characteristic in contrast to result obtained for popular method of relaxation time approximation.