Capacitance-voltage profiling techniques for characterization of semiconductor materials and devices

TL;DR

This paper revisits capacitance-voltage profiling methods for semiconductor characterization, incorporating a new physics formula discovered in 2006 to improve measurement accuracy and understanding.

Contribution

It introduces a redefined C/V measurement technique based on a novel physics formula, enhancing the analysis of semiconductor materials and devices.

Findings

Improved accuracy in capacitance-voltage measurements

Enhanced understanding of semiconductor properties

Validation of the new physics formula in profiling techniques

Abstract

This work re-defines the well-known C/V (capacitance-voltage) measurement technique, in the view of a new physics formula, discovered in 2006 by the same author.