Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped InGaAs

TL;DR

This study measures the anisotropic effective mass of electrons in n-doped InGaAs using ultrafast terahertz techniques, revealing how conduction band nonparabolicity influences electron dynamics under high-field THz pulses.

Contribution

It provides direct experimental measurement of electron effective mass anisotropy and links it to conduction band nonparabolicity through a microscopic theoretical model.

Findings

Effective mass anisotropy is directly measured.

Nonparabolicity significantly affects THz response.

Self-consistent light-matter coupling impacts electron dynamics.

Abstract

The anisotropic effective mass of electrons is directly measured using time-resolved THz- pump/THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory is used to attribute this anisotropy in the THz probe transmission to the nonparabolicity of the conduction band. Self-consistent light-matter coupling is shown to contribute significantly to the THz response.