Graphene-based modulation-doped superlattice structures

TL;DR

This paper investigates the electronic transport properties of a novel graphene-based superlattice structure, highlighting its high conductance, temperature stability, and potential for advanced quantum device applications.

Contribution

It proposes a new graphene-based modulation-doped superlattice structure with unique electrical and thermionic properties, advancing the design of quantum devices.

Findings

High conductance and mobility at elevated temperatures

Temperature-insensitive and robust electrical control

Enhanced thermionic current density due to graphene layers

Abstract

The electronic transport properties of graphene-based superlattice structures are investigated. A graphene-based modulation-doped superlattice structure geometry is proposed and consist of periodically arranged alternate layers: InAs/graphene/GaAs/graphene/GaSb. Undoped graphene/GaAs/graphene structure displays relatively high conductance and enhanced mobilities at elevated temperatures unlike modulation-doped superlattice structure more steady and less sensitive to temperature and robust electrical tunable control on the screening length scale. Thermionic current density exhibits enhanced behaviour due to presence of metallic (graphene) mono-layers in superlattice structure. The proposed superlattice structure might become of great use for new types of wide-band energy gap quantum devices.