Tunable band gaps in bilayer graphene-BN heterostructures

TL;DR

This study demonstrates that applying an external electric field to bilayer graphene sandwiched between hexagonal boron nitride sheets allows continuous tuning of its band gap from 0 to 0.2 eV, maintaining robustness despite stacking disorder.

Contribution

It provides a detailed density functional theory analysis showing tunable band gaps in graphene-BN heterostructures, highlighting their potential for electronic device applications.

Findings

Band gap tunable from 0 to 0.2 eV with electric field

Robustness of the gap despite stacking disorder

BN sheets do not significantly alter graphene's fundamental response

Abstract

We investigate band-gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV, and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening. The calculations suggest that the graphene-boron nitride heterostructures could provide a viable route to graphene-based electronic devices.