Giant Stark effect in the emission of single semiconductor quantum dots
Anthony. J. Bennett, Raj. B. Patel, Joanna Skiba-Szymanska, Christine, A. Nicoll, Ian Farrer, David A. Ritchie, Andrew J. Shields,
TL;DR
This paper investigates the quantum-confined Stark effect in single InAs/GaAs quantum dots within a specialized quantum well, demonstrating large Stark shifts at high electric fields, which could enable uniform energy transitions in quantum dot applications.
Contribution
It introduces a method to observe large Stark shifts in single quantum dots by increasing barrier height, advancing control over quantum dot emission energies.
Findings
Stark shifts up to 25 meV observed at -500 kV/cm
Emission from a single dot detectable at high electric fields
Potential for uniform energy transitions in quantum dot devices
Abstract
We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of -500 kV/cm, leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions at the same energy.
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