Low-Temperature Dependences of the Polarization of Terahertz Emission from $n$-Germanium in Heating Electric Fields
V.M. Bondar, P.M. Tomchuk

TL;DR
This paper investigates how the polarization of terahertz emission from n-type germanium varies with temperature, aiming to understand the influence of different carrier scattering mechanisms in hot electron emission.
Contribution
It provides experimental temperature-dependent measurements of terahertz polarization in n-Ge, clarifying the role of impurity and phonon scattering in emission behavior.
Findings
Polarization dependence varies with temperature
Scattering mechanisms influence emission polarization
Results support the scattering-based model of terahertz emission
Abstract
As was noted in [3], in order to verify the assumption that the behavior of the polarization dependences of the terahertz emission by hot electrons from -Ge is determined by the type of carrier scattering, it is necessary to perform temperature measurements of this dependence in the range between the temperatures, where the scattering is determined by impurities and by acoustic lattice vibrations, respectively. The given work presents the results of such investigations.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Surface and Thin Film Phenomena · Semiconductor materials and interfaces
