Anomalous propagation of luminescence through bulk n-InP
Serge Luryi, Oleg G. Semyonov, Arsen Subashiev, and Zhichao Chen
TL;DR
This paper investigates how photon recycling in heavily doped bulk n-InP can enhance luminescence transmission, aiming to improve semiconductor scintillator efficiency for radiation detection.
Contribution
It introduces a study on optimizing luminescence transmission in heavily doped n-InP through photon recycling mechanisms.
Findings
Enhanced luminescence transmission observed in heavily doped n-InP
Photon recycling significantly contributes to anomalous luminescence propagation
Potential improvements in scintillator efficiency for radiation detection
Abstract
Implementation of a semiconductor as a scintillator with a lattice-matched surface photo-diode for radiation detection requires efficient luminescence collection. Low and heavily doped bulk n-InP has been studied to optimize luminescence transmission via photon recycling.
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Taxonomy
TopicsAdvanced Semiconductor Detectors and Materials · Radiation Detection and Scintillator Technologies · Advanced Energy Technologies and Civil Engineering Innovations