Large tunable photonic band gaps in nanostructured doped semiconductors
J. Leon, T. Taliercio

TL;DR
This paper demonstrates a nanostructure with periodically layered doped and passive semiconductors that can generate surface plasmon polaritons and exhibits a large, tunable photonic band gap spanning mid-infra-red to Tera-Hertz frequencies.
Contribution
It introduces a new nanostructure design that achieves a fully tunable, large photonic band gap using simple dielectric modeling, advancing control over plasmonic properties.
Findings
Surface plasmon polaritons are spontaneously generated in the structure.
The structure exhibits a photonic band gap exceeding 50%.
The band gap is tunable across a broad frequency range.
Abstract
A plasmonic nanostructure conceived with periodic layers of a doped semiconductor and passive semiconductor is shown to generate spontaneously surface plasmon polaritons thanks to its periodic nature. The nanostructure is demonstrated to behave as an effective material modeled by a simple dielectric function of ionic-crystal type, and possesses a fully tunable photonic band gap, with widths exceeding 50%, in the region extending from mid-infra-red to Tera-Hertz.
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