Ab-initio study of the bandgap engineering of Al(1-x)Ga(x)N for optoelectronic applications
B. Amin, Iftikhar Ahmad, M. Maqbool, S. Goumri-Said, R. Ahmad

TL;DR
This theoretical study investigates how varying Ga concentration in Al(1-x)Ga(x)N affects its electronic and optical properties, revealing potential for optoelectronic applications in visible and UV spectra.
Contribution
It provides the first comprehensive ab-initio analysis of the bandgap and optical behavior of Al(1-x)Ga(x)N alloys with varying Ga content.
Findings
Bandgap decreases from 5.5 eV to 3.0 eV as Ga increases.
Refractive index drops below 1 at energies above 14 eV.
Optical properties shift from linear to non-linear at high energies.
Abstract
A theoretical study of Al(1-x)Ga(x)N, based on full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties and non-linear behavior of the compound with the variation of Ga concentration. It is found that the bandgap decreases with the increase of Ga in Al(1-x)Ga(x)N. A maximum value of 5.5 eV is determined for the bandgap of pure AlN which reaches to minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for photon energies larger than 14 eV results group velocity of the incident radiation higher than the vacuum velocity of light. This astonishing result shows that at higher energies the optical…
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