Electrical transport through a mechanically gated molecular wire
C. Toher, R. Temirov, A. Greuling, F. Pump, M. Kaczmarski, M., Rohlfing, G. Cuniberti, F.S. Tautz

TL;DR
This study investigates how mechanical gating affects electrical conductance in a molecular wire using STM experiments and compares the results with ab initio simulations, highlighting the need for beyond mean-field methods to accurately model electron correlation effects.
Contribution
It demonstrates the limitations of DFT-LDA in transport simulations and emphasizes the importance of advanced methods for accurate molecular conductance modeling.
Findings
Tip retraction mechanically gates the molecular wire in STM junctions.
DFT-LDA accurately predicts junction geometry but fails to reproduce conductance behavior.
Electron correlation effects require beyond mean-field simulation approaches.
Abstract
A surface-adsorbed molecule is contacted with the tip of a scanning tunneling microscope (STM) at a pre-defined atom. On tip retraction, the molecule is peeled off the surface. During this experiment, a two-dimensional differential conductance map is measured on the plane spanned by the bias voltage and the tip-surface distance. The conductance map demonstrates that tip retraction leads to mechanical gating of the molecular wire in the STM junction. The experiments are compared with a detailed ab initio simulation. We find that density functional theory (DFT) in the local density approximation (LDA) describes the tip-molecule contact formation and the geometry of the molecular junction throughout the peeling process with predictive power. However, a DFT-LDA-based transport simulation following the non-equilibrium Green's functions (NEGF) formalism fails to describe the behavior of the…
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